| PART |
Description |
Maker |
| 2SC4892 |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SC5045 |
15 A, 800 V, NPN, Si, POWER TRANSISTOR
|
|
| FJAF6916TU |
16 A, 800 V, NPN, Si, POWER TRANSISTOR TO-3PF, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| 2SC5353-T60-K 2SC5353-T6C-K 2SC5353-TA3-T 2SC5353- |
HIGH VOLTAGE NPN TRANSISTOR 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Unisonic Technologies Co., Ltd.
|
| BU2527DF |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRFD320 FN2325 |
500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
0.5A 400V 1.800 Ohm N-Channel Power MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
From old datasheet system
0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| KSC5027 C5027 KSC5027N KSC5027O KSC5027R |
High Voltage and High Reliability 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4602-FD5K-DR 2SD2201-FD5S-DL 2SD2201-FD5R 2SD22 |
3 A, 800 V, NPN, Si, POWER TRANSISTOR
7 A, 80 V, NPN, Si, POWER TRANSISTOR
5 A, 80 V, NPN, Si, POWER TRANSISTOR
7 A, 50 V, PNP, Si, POWER TRANSISTOR
4 A, 400 V, NPN, Si, POWER TRANSISTOR
5 A, 50 V, PNP, Si, POWER TRANSISTOR
|
SANYO SEMICONDUCTOR CO LTD
|
| KSC5027RTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
